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Excitonic luminescence in doped silicon

University of British Columbia

The photoluminescence spectrum of silicon doped with phosphorus, boron, aluminum and gallium impurities is studied in the 1.6 to 27 K temperature range. New structure is observed in the spectra of silicon doped with each of these impurities. These studies strongly support the bound multiexciton complex explanation of the line series observed in lightly doped silicon, an explanation which has recently been questioned. Many of the recent predictions of the structure of these complexes are verified. In particular, a bound excited state of the phosphorus bound exciton is reported for the first time. Similarly, it is shown that many of the bound multiexciton complexes also have such excited states, and the importance of these excited states in the determination of the binding energies of the complexes is demonstrated. The broadenings of the phonon-assisted bound exciton lines in silicon are studied for the first time and the first direct observation of the effects of the free exciton ground state splitting in silicon are reported.

Text

2010-02-23

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http://hdl.handle.net/2429/20786

Physics

University of British Columbia

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