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A study of level crossing effects in TCNQ salts Cabañas, Francisco Xavier

Abstract

ESR results for DEM(TCNQ)₂ and for MEM(TCNQ)₂ are presented as examples of TCNQ salts with and without level crossing effects. In the case of DEM(TCNQ)₂ we are performing ESR on a system with two types of spins. The latter are due to the two kinds of stacks of the acceptor TCNQ molecules in DEM(TCNQ)₂. The level crossing occurs when the g value of these two kinds of electrons are the same. This is compared to the case of MEM(TCNQ)₂ where there is only one kind of TCNQ stack and consequently no level crossing effect. It is found that g values and susceptibilities of the ESR spectra for DEM(TCNQ)₂ can be fitted very well to an interaction between the stacks of the form J ∑i,j,Si,Sj; with J > 0. This gives an antiferromagnetic coupling between every spin on one type of stack with every spin on the other type of stack. This type of interaction is also in qualitative agreement with the published results for HMM(TCNQ)₂. The experimental results in DEM(TCNQ)₂ and MEM(TCNQ)₂ also show that there are small but significant differences in the g tensors when the temperature or the crystalline environment are changed, and consequently the g tensor in these compounds does not depend only on the orientation of TCNQ molecule in the magnetic field as previously assumed. These differences in g are typically less than 2 x 10⁻⁴.

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