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Radiative heat transfer in gallium arsenide lec crystal pullers

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Title: Radiative heat transfer in gallium arsenide lec crystal pullers
Author: Bakeer, Muna
Degree: Master of Applied Science - MASc
Program: Mechanical Engineering
Copyright Date: 1990
Subject Keywords Gallium arsenide crystals
Issue Date: 2010-11-10
Publisher University of British Columbia
Series/Report no. UBC Retrospective Theses Digitization Project [http://www.library.ubc.ca/archives/retro_theses/]
Abstract: A numerical analysis of radiative heat transfer in a liquid encapsulant Czochralski gallium arsenide crystal puller is developed. The heat transfer and equivilent ambient temperature of each surface element are calculated using the Gebhart radiative model. The effective ambient temperature, to which each surface element is radiating, is found to vary indicating that assuming a constant ambient temperature for all surfaces (simplified radiative model) is incorrect. The importance of including the middle and top cylinders of the growth chamber in numerical analysis of radiative heat transfer in the system is evaluated in the study. The upper section could be replaced by one isothermal surface without significant change of the effective ambient temperature distribution. Fluid flow and heat transfer in the GaAs melt, crystal and encapsulant are calculated using a three dimensional axisymmetric finite difference code which includes the detailed radiative model. The mathematical modelling of the fluid and heat flow describes steady state transport phenomena in a three dimensional solution domain with latent heat release at the liquid/solid interface. The predicted flow and temperature fields using the detailed radiative model differ considerably from the predicted fields using the simplified model. The simplified model shows high axial and low radial temperature gradients in the crystal near the encapsulant region; the axial gradient decreases and the radial gradient increases with increasing distance from the encapsulant top. The detailed model shows a high radial temperature gradient in the crystal near the crystal-encapsulant-ambient junction and nearly flat isotherms in the top half of the crystal.
Affiliation: Applied Science, Faculty of
URI: http://hdl.handle.net/2429/29916
Scholarly Level: Graduate

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