Go to  Advanced Search

Design of a 1550nm SiGe/Si quantum-well optical modulator

Show full item record

Files in this item

Files Size Format Description   View
Chrostowski_SPIE_7750_77501N.pdf 336.8Kb Adobe Portable Document Format   View/Open
 
Title: Design of a 1550nm SiGe/Si quantum-well optical modulator
Author: Xia, Guangrui; Rouger, Nicolas; Tasmin, Tania; Jaeger, Nicolas A. F.; Chrostowski, Lukas
Issue Date: 2010
Publicly Available in cIRcle 2011-06-01
Publisher Society of Photo-Optical Instrumentation Engineers
Citation: Tasmin, Tania; Rouger, Nicolas; Xia, Guangrui; Chrostowski, Lukas; Jaeger, Nicolas A. F. Design of a 1550nm SiGe/Si quantum-well optical modulator. Photonics North 2010, edited by Henry P. Schriemer, Rafael N. Kleiman, Proceedings of SPIE Volume 7750, 77501N, 2010. http://dx.doi.org/10.1117/12.870014
Abstract: An electrooptic modulator containing a single SiGe/Si quantum-well has been designed for operation at ?O= 1.55 µm. This single quantum-well modulator has a lower VpLp than the 3 quantum-well modulator recently designed and optimized by Maine et al. for operation at ?O = 1.31 µm, for which the VpLp product was 1.8 V cm. This single quantum-well modulator contains a Si0.8Ge0.2 quantum-well with Non-Intentionally Doped (NID) and P+ highly doped layers on either side. With no field applied, holes from the P+ layers are captured by and confined in the quantum-well and when a reverse bias is applied holes are released from the quantum well and drift to the P+ contact layer. Variations of the hole distribution lead to changes in the free-carrier absorption and the refractive index of each layer and subsequently to phase modulation of guided TE modes. The VpLp product of the single quantum-well modulator is estimated 1.09 V cm for low voltage linear modulation and 1.208 V cm for 0 to 1.6 V digital modulation, whereas the 3 quantum-well modulator gives a VpLp of 2.039 V cm for 0 to 6 V digital modulation for operation at ?O = 1.55 µm. Also, the optical loss in the single quantum-well (5.36 dB/cm at V = 0 V ) is lower than that of the 3 quantum-well structure (5.75 dB/cm at V = 0 V ). This single quantum-well modulator should also offer higher frequency operation than the 3 quantum-well modulator. Copyright 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Affiliation: Electrical and Computer Engineering, Dept of
URI: http://hdl.handle.net/2429/35022
Peer Review Status: Reviewed
Scholarly Level: Faculty

This item appears in the following Collection(s)

Show full item record

All items in cIRcle are protected by copyright, with all rights reserved.

UBC Library
1961 East Mall
Vancouver, B.C.
Canada V6T 1Z1
Tel: 604-822-6375
Fax: 604-822-3893