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Design of a 1550nm SiGe/Si quantum-well optical modulator Xia, Guangrui; Rouger, Nicolas; Tasmin, Tania; Jaeger, Nicolas A. F.; Chrostowski, Lukas
Abstract
An electrooptic modulator containing a single SiGe/Si quantum-well has been designed for operation at ?O= 1.55 µm. This single quantum-well modulator has a lower VpLp than the 3 quantum-well modulator recently designed and optimized by Maine et al. for operation at ?O = 1.31 µm, for which the VpLp product was 1.8 V cm. This single quantum-well modulator contains a Si0.8Ge0.2 quantum-well with Non-Intentionally Doped (NID) and P+ highly doped layers on either side. With no field applied, holes from the P+ layers are captured by and confined in the quantum-well and when a reverse bias is applied holes are released from the quantum well and drift to the P+ contact layer. Variations of the hole distribution lead to changes in the free-carrier absorption and the refractive index of each layer and subsequently to phase modulation of guided TE modes. The VpLp product of the single quantum-well modulator is estimated 1.09 V cm for low voltage linear modulation and 1.208 V cm for 0 to 1.6 V digital modulation, whereas the 3 quantum-well modulator gives a VpLp of 2.039 V cm for 0 to 6 V digital modulation for operation at ?O = 1.55 µm. Also, the optical loss in the single quantum-well (5.36 dB/cm at V = 0 V ) is lower than that of the 3 quantum-well structure (5.75 dB/cm at V = 0 V ). This single quantum-well modulator should also offer higher frequency operation than the 3 quantum-well modulator. Copyright 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Item Metadata
Title |
Design of a 1550nm SiGe/Si quantum-well optical modulator
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Creator | |
Publisher |
Society of Photo-Optical Instrumentation Engineers (SPIE)
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Date Issued |
2010
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Description |
An electrooptic modulator containing a single SiGe/Si quantum-well has been designed for operation at ?O= 1.55 µm. This single quantum-well
modulator has a lower VpLp than the 3 quantum-well modulator recently designed and optimized by Maine et al. for operation at ?O = 1.31 µm,
for which the VpLp product was 1.8 V cm. This single quantum-well modulator contains a Si0.8Ge0.2 quantum-well with Non-Intentionally Doped
(NID) and P+ highly doped layers on either side. With no field applied, holes from the P+ layers are captured by and confined in the quantum-well
and when a reverse bias is applied holes are released from the quantum well and drift to the P+ contact layer. Variations of the hole distribution
lead to changes in the free-carrier absorption and the refractive index of each layer and subsequently to phase modulation of guided TE modes.
The VpLp product of the single quantum-well modulator is estimated 1.09 V cm for low voltage linear modulation and 1.208 V cm for 0 to 1.6 V
digital modulation, whereas the 3 quantum-well modulator gives a VpLp of 2.039 V cm for 0 to 6 V digital modulation for operation at ?O = 1.55 µm.
Also, the optical loss in the single quantum-well (5.36 dB/cm at V = 0 V ) is lower than that of the 3 quantum-well structure (5.75 dB/cm at V = 0 V ).
This single quantum-well modulator should also offer higher frequency operation than the 3 quantum-well modulator.
Copyright 2010 Society of Photo-Optical Instrumentation Engineers.
One print or electronic copy may be made for personal use only. Systematic reproduction and distribution,
duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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Genre | |
Type | |
Language |
eng
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Date Available |
2011-06-01
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Provider |
Vancouver : University of British Columbia Library
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Rights |
Attribution-NonCommercial-NoDerivatives 4.0 International
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DOI |
10.14288/1.0107531
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URI | |
Affiliation | |
Citation |
Tasmin, Tania; Rouger, Nicolas; Xia, Guangrui; Chrostowski, Lukas; Jaeger, Nicolas A. F. Design of a 1550nm SiGe/Si quantum-well optical modulator. Photonics North 2010, edited by Henry P. Schriemer, Rafael N. Kleiman, Proceedings of SPIE Volume 7750, 77501N, 2010.
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Publisher DOI |
10.1117/12.870014
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Peer Review Status |
Reviewed
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Scholarly Level |
Faculty
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Copyright Holder |
Chrostowski, Lukas
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Rights URI | |
Aggregated Source Repository |
DSpace
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Rights
Attribution-NonCommercial-NoDerivatives 4.0 International