- Library Home /
- Search Collections /
- Open Collections /
- Browse Collections /
- UBC Theses and Dissertations /
- The effect of optical injection on the gain and high...
Open Collections
UBC Theses and Dissertations
UBC Theses and Dissertations
The effect of optical injection on the gain and high frequency performance of AlGaAs/GaAs heterojunction bipolar transistor Lee, Chia-Nan
Abstract
A comprehensive, one-dimensional, analytical model of the graded-base AlGaAs/GaAs heterojunction bipolar transistor is presented, and used to examine the influence of optical injection on the DC and high-frequency performance of a device with a conventional pyramidal structure. Absorption is limited to the base and collector regions because of the window effect of the wider bandgap emitter. Grading is considered by varying the A l mole fraction x linearly across the base to a value of zero at the base-collector boundary. Recombination in the space-charge and neutral regions of the device is modeled by considering Shockley-Read-Hall, Auger and radiative processes. Experimental devices were obtained from the Communications Research Centre, Ottawa and packaged by the author at the Alberta Microelectronics Centre and the Telecommunications Research Laboratory, Edmonton. The packaged devices were tested to evaluate the DC and high-frequency performances. Comparisons between predictions of the model and experimental data from a packaged device are presented. Optical injection is observed to improve the DC and high-frequency characteristics of the device.
Item Metadata
Title |
The effect of optical injection on the gain and high frequency performance of AlGaAs/GaAs heterojunction bipolar transistor
|
Creator | |
Publisher |
University of British Columbia
|
Date Issued |
1995
|
Description |
A comprehensive, one-dimensional, analytical model of the graded-base
AlGaAs/GaAs heterojunction bipolar transistor is presented, and used to examine the
influence of optical injection on the DC and high-frequency performance of a device with a
conventional pyramidal structure. Absorption is limited to the base and collector regions
because of the window effect of the wider bandgap emitter. Grading is considered by
varying the A l mole fraction x linearly across the base to a value of zero at the base-collector
boundary. Recombination in the space-charge and neutral regions of the device
is modeled by considering Shockley-Read-Hall, Auger and radiative processes.
Experimental devices were obtained from the Communications Research Centre, Ottawa
and packaged by the author at the Alberta Microelectronics Centre and the
Telecommunications Research Laboratory, Edmonton. The packaged devices were tested
to evaluate the DC and high-frequency performances. Comparisons between predictions
of the model and experimental data from a packaged device are presented. Optical
injection is observed to improve the DC and high-frequency characteristics of the device.
|
Extent |
6142676 bytes
|
Genre | |
Type | |
File Format |
application/pdf
|
Language |
eng
|
Date Available |
2009-01-21
|
Provider |
Vancouver : University of British Columbia Library
|
Rights |
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.
|
DOI |
10.14288/1.0064916
|
URI | |
Degree | |
Program | |
Affiliation | |
Degree Grantor |
University of British Columbia
|
Graduation Date |
1995-11
|
Campus | |
Scholarly Level |
Graduate
|
Aggregated Source Repository |
DSpace
|
Item Media
Item Citations and Data
Rights
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.