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Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters

University of British Columbia

Bipolar transistors employing an MIS junction for the emitter exhibit the very desirable properties of high operating frequency and/or high common emitter gains. The topic of this thesis is to investigate the usefulness of the MIS bipolar transistor in real applications. The experimental results show two possible limitations of the devices. The principal limitation is the inability of these devices to withstand moderate temperature stressing. The second limitation is the relatively high emitter series resistance. The principal degradation mode of these devices under temperature stressing is suggested to be the reduction of the thin insulating oxide.

Text

2012-04-16

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http://hdl.handle.net/2429/42013

Electrical and Computer Engineering

University of British Columbia

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