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A steady-state analytical solution for MOSFET channel temperature estimation

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dc.contributor.author Rajput, Harish C.
dc.date.accessioned 2012-11-05T17:43:11Z
dc.date.available 2012-11-05T17:43:11Z
dc.date.copyright 2011 en_US
dc.date.issued 2012-11-05
dc.identifier.uri http://hdl.handle.net/2429/43566
dc.description.abstract A steady state analytical solution for MOSFET (metal oxide semiconductor field effect transistor) channel temperature estimation has been derived and the analytical model has been used to develop a software tool called HeatMOS©. HeatMOS© estimates the MOSFET channel temperature based on information from the device layout and an industry standard BSIM3 compact model. The steady state solution is an approximation for the channel temperature distribution along its length. The HeatMOS© model has been designed to be integrated into a VLSI CAD flow to predict the steady state temperature of a full micro-chip. An equivalent M-network model for steady state temperature can be extended for each MOSFET device in a complete micro-chip. In future work, HeatMOS© can be combined with the models of interconnect to develop a full micro-chip thermal analysis software tool. en_US
dc.language.iso eng en_US
dc.publisher University of British Columbia en
dc.title A steady-state analytical solution for MOSFET channel temperature estimation en_US
dc.type Electronic Thesis or Dissertation en
dc.degree.name Master of Applied Science - MASc en_US
dc.degree.discipline Electrical and Computer Engineering en_US
dc.degree.grantor University of British Columbia en
dc.date.graduation 2011-05 en_US
dc.degree.campus UBCO en_US
dc.description.scholarlevel Graduate en


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