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Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride

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dc.contributor.author Baghani, Erfan
dc.date.accessioned 2012-11-14T19:24:26Z
dc.date.available 2012-11-14T19:24:26Z
dc.date.copyright 2012 en_US
dc.date.issued 2012-11-14
dc.identifier.uri http://hdl.handle.net/2429/43581
dc.description.abstract Dislocation lines affect the electrical and optical properties of semiconductors. In this research, the effect that the threading dislocation lines have on the free electron concentration and the electron mobility within gallium nitride and indium nitride is investigated. A formulation is developed for obtaining the screening space charge concentration and the corresponding electrostatic potential profile surrounding the dislocation lines. The resultant electrostatic potential profile has then been used to compute the associated electron mobility, limited by scattering from the charged dislocation lines. As part of this research, a Gibbs factor formalism is also developed that can readily obtain the occupation statistics of the defect sites associated with the threading dislocation lines. en_US
dc.language.iso eng en_US
dc.publisher University of British Columbia en
dc.title Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride en_US
dc.type Electronic Thesis or Dissertation en
dc.degree.name Doctor of Philosophy - PhD en_US
dc.degree.discipline Electrical and Computer Engineering en_US
dc.degree.grantor University of British Columbia en
dc.date.graduation 2013-05 en_US
dc.degree.campus UBCO en_US
dc.description.scholarlevel Graduate en


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