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Fabrication and modeling of composite-collector heterojunction bipolar transistors

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dc.contributor.author Ghodsian, Bahram
dc.date.accessioned 2009-02-24T19:35:20Z
dc.date.available 2009-02-24T19:35:20Z
dc.date.copyright 1993 en
dc.date.issued 2009-02-24T19:35:20Z
dc.identifier.uri http://hdl.handle.net/2429/4997
dc.description.abstract This thesis is concerned with processing and modeling aspects of heterojunction bipolar transistors (HBTs) with composite-collectors. HBTs with InGaAs/InP composite collectors were designed, fabricated and measured. Their dc characteristics are compared with those of a device which was structurally similar but with a conventional n-InGaAs collector. The measured data for both devices can be well-described by an analytical model. The model indicates the need to ensure that the InGaAs layer in the composite collector exceed a critical thickness if the current gain is to be preserved. It is also shown that the spacer layer between the emitter and base, which was used to prevent zinc diffusion into the emitter, must be considered in the model if the collector current is to be correctly predicted. The comparison of the experimental data also suggests that surface recombination is not a dominant base recombination current in the devices studied. en
dc.format.extent 2092357 bytes
dc.format.mimetype application/pdf
dc.language.iso eng en
dc.relation.ispartofseries UBC Retrospective Theses Digitization Project [http://www.library.ubc.ca/archives/retro_theses/]
dc.title Fabrication and modeling of composite-collector heterojunction bipolar transistors en
dc.type Electronic Thesis or Dissertation
dc.degree.name Master of Applied Science - MASc en
dc.degree.discipline Electrical and Computer Engineering en
dc.degree.grantor University of British Columbia
dc.date.graduation 1994-05 en
dc.degree.campus UBCV en

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